MT47H512M8WTR-3:C

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Position :

BOTTOM

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Organization :

512MX8

Memory Width :

8

Voltage - Supply :

1.7V~1.9V

Memory Interface :

Parallel

Data Bus Width :

8B

Max Frequency :

667MHz

I/O Type :

COMMON

Mounting Type :

Surface Mount

Operating Supply Voltage :

1.8V

Package / Case :

63-TFBGA

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Operating Temperature :

0°C~85°C TC

Memory Size :

4Gb 512M x 8

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Output Characteristics :

3-STATE

Write Cycle Time - Word, Page :

15ns

Published :

2012

Clock Frequency :

333MHz

Address Bus Width :

18b

JESD-609 Code :

e3

Lead Free :

Lead Free

Memory Type :

Volatile

Number of Terminations :

63

Packaging :

Tray

Refresh Cycles :

8192

Density :

4 GB

Supply Voltage :

1.8V

Access Time :

450ps

Pbfree Code :

yes

Number of Pins :

63

Base Part Number :

MT47H512M8