MT29F2G08ABAEAWP-IT:E TR

Manufacturer :

Micron Technology

Product Category :

Memory

JESD-609 Code :

e3

Number of Terminations :

48

ECCN Code :

3A991.B.1.A

JESD-30 Code :

R-PDSO-G48

Programming Voltage :

2.7V

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.5mm

Width :

12mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Width :

8

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

2.7V

Mounting Type :

Surface Mount

Operating Mode :

ASYNCHRONOUS

RoHS Status :

ROHS3 Compliant

Supply Voltage :

3.3V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Memory Density :

2147483648 bit

Peak Reflow Temperature (Cel) :

260

Length :

18.4mm

Memory Format :

Flash

Base Part Number :

MT29F2G08

Memory Interface :

Parallel

Packaging :

Tape and Reel (TR)

Voltage - Supply :

2.7V~3.6V

HTS Code :

8542.32.00.51

Published :

2013

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Terminal Finish :

MATTE TIN

Memory Type :

Non-Volatile

Organization :

256MX8

Memory Size :

2Gb 256M x 8

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Surface Mount :

yes

Factory Lead Time :

5 Weeks