MRFE6VP5600HR5
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- Mfr.Part #
- MRFE6VP5600HR5
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-1230-4H
- Datasheet
- Download
- Description
- FET RF 2CH 130V 230MHZ NI1230
- Stock
- 1,409
- In Stock ：
- 1,409
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Package / Case :
- NI-1230-4H
- Number of Terminations :
- 4
- Current - Test :
- 100mA
- Operating Temperature (Max) :
- 225°C
- Published :
- 2006
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- DS Breakdown Voltage-Min :
- 130V
- Configuration :
- COMMON SOURCE, 2 ELEMENTS
- Base Part Number :
- MRFE6VP5600
- Gain :
- 25dB
- Qualification Status :
- Not Qualified
- Number of Elements :
- 2
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Transistor Type :
- LDMOS (Dual)
- HTS Code :
- 8541.29.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Power - Output :
- 600W
- Power Dissipation-Max (Abs) :
- 1670W
- Frequency :
- 230MHz
- Terminal Form :
- Flat
- JESD-30 Code :
- R-CDFM-F4
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Test :
- 50V
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- SOURCE
- Surface Mount :
- yes
- Voltage - Rated :
- 130V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- MRFE6VP5600HR5
MRFE6VP5600HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRFE6VP5600HR5 Description
MRFE6VP5600HR5 is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MRFE6VP5600HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VP5600HR5 has the common source configuration.
MRFE6VP5600HR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRFE6VP5600HR5 Applications
ISM applications
DC large signal applications
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