MRF8P20140WHSR3

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Configuration :

COMMON SOURCE, 2 ELEMENTS

Published :

2006

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Number of Elements :

2

ECCN Code :

EAR99

Package / Case :

NI-780S-4

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

LDMOS (Dual)

Case Connection :

SOURCE

Voltage - Rated :

65V

Voltage - Test :

28V

Operating Temperature (Max) :

125°C

Frequency :

1.88GHz~1.91GHz

Factory Lead Time :

10 Weeks

DS Breakdown Voltage-Min :

65V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Current - Test :

500mA

Surface Mount :

yes

Base Part Number :

MRF8P20140

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Power - Output :

24W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Gain :

16dB

HTS Code :

8541.29.00.75

JESD-30 Code :

R-CDFP-F4

Qualification Status :

Not Qualified