MPSW51ARLRA
- Mfr.Part #
- MPSW51ARLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO92
- Stock
- 34,739
- In Stock :
- 34,739
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 700mV
- hFE Min :
- 55
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Reach Compliance Code :
- not_compliant
- Current Rating :
- -1A
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- -700mV
- Max Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -50V
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Voltage - Rated DC :
- -40V
- Published :
- 1997
- Base Part Number :
- MPSW51A
- Mounting Type :
- Through Hole
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- HTS Code :
- 8541.29.00.75
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 240
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MPSW51ARLRA
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW51ARLRA Overview
DC current gain in this device equals 60 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 50MHz.In extreme cases, the collector current can be as low as 1A volts.
MPSW51ARLRA Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
MPSW51ARLRA Applications
There are a lot of ON Semiconductor
MPSW51ARLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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