MMBTA06LT1HTSA1
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- Mfr.Part #
- MMBTA06LT1HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23
- Stock
- 5,813,016
- In Stock ：
- 5,813,016
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- MMBTA
- Current - Collector (Ic) (Max) :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Power Dissipation :
- 330mW
- Max Power Dissipation :
- 330mW
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 80V
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- SOT-23-3
- Voltage - Rated DC :
- 80V
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current Rating :
- 500mA
- Power - Max :
- 330mW
- Emitter Base Voltage (VEBO) :
- 4V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Min Operating Temperature :
- -65°C
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- MMBTA06LT1HTSA1
NPN 150°C TJ 100nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06LT1HTSA1 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Input voltage breakdown is available at 80V volts.Product comes in the supplier's device package SOT-23-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA06LT1HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of SOT-23-3
MMBTA06LT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBTA06LT1HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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