MJE2955T
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- Mfr.Part #
- MJE2955T
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.4mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 20
- Collector Base Voltage (VCBO) :
- 70V
- Lead Free :
- Lead Free
- Base Part Number :
- MJE295
- Width :
- 4.6mm
- Voltage - Rated DC :
- -60V
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Height :
- 9.15mm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- Max Power Dissipation :
- 75W
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 2MHz
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Transition Frequency :
- 2MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- VCEsat-Max :
- 8 V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 75W
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 700µA
- Frequency :
- 2MHz
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.1V
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Current Rating :
- -10A
- Max Collector Current :
- 10A
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Datasheets
- MJE2955T
PNP 150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE2955T Bipolar Transistor Description
The MJE3055T is a silicon Epitaxial-Base NPN transistor in the Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. It has a high current gain of 20~70 and its collector-emitter voltage is rated 60 V at its maximum. Moreover, it has a wide operating temperature ranging from -55 ~ +155 °C.
MJE2955T Bipolar Transistor Features
With TO-220 package
A complement to type MJE3055T
High DC current gain -hFE= 20–70 @ IC=-4 Adc
The excellent safe operating area
Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc
MJE2955T Bipolar Transistor Applications
General-Purpose Amplifiers
Power Switching Applications
Hi-Fi
Industrial Control
Mobile Phones
Television
Radio Transmitters
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