MJE182
- Mfr.Part #
- MJE182
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A SOT32-3
- Stock
- 27,673
- In Stock :
- 27,673
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3A
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Max Power Dissipation :
- 12.5W
- Transistor Type :
- NPN
- Height :
- 11.05mm
- Width :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 1.7V
- Length :
- 7.8mm
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 12.5W
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Mount :
- Through Hole
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector-Base Capacitance-Max :
- 40pF
- Voltage - Rated DC :
- 100V
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- hFE Min :
- 50
- Base Part Number :
- MJE182
- Pin Count :
- 3
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Mounting Type :
- Through Hole
- Datasheets
- MJE182

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
MJE182 belongs to the family of low-voltage NPN transistors with high-speed switching that are designed based on epitaxial planar technology. It is able to reduce loses during switching. Due to its high quality and reliable performance, it is well suited for low-power audio amplifier as well as low-current and high-speed switching applications.
MJE182 Features
High-speed switching
High DC current gain
Epitaxial planar technology
Annular construction for low leakages
MJE182 Applications
Low-power audio amplifier
Power supply management
Low-current and high-speed switching applications
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