MB85RC128PNF-G-JNE1
- Mfr.Part #
- MB85RC128PNF-G-JNE1
- Manufacturer
- Fujitsu Electronics America, Inc.
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC FRAM 128KBIT I2C 400KHZ 8SOP
- Stock
- 6,502
- In Stock :
- 6,502
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- Manufacturer :
- Fujitsu Electronics America, Inc.
- Product Category :
- Memory
- Number of Words :
- 16384 words
- Package Shape :
- RECTANGULAR
- Width :
- 3.9 mm
- Memory Size :
- 128Kb 16K x 8
- Voltage - Supply :
- 2.7V~3.6V
- Terminal Form :
- Gull wing
- Number of Functions :
- 1
- Operating Supply Voltage :
- 3.3V
- Memory Interface :
- I2C
- Memory Type :
- Non-Volatile
- Reach Compliance Code :
- Unknown
- Published :
- 1999
- Memory IC Type :
- MEMORY CIRCUIT
- Seated Height-Max :
- 1.75 mm
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Frequency :
- 400kHz
- Operating Mode :
- SYNCHRONOUS
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Operating Temperature :
- 85°C
- Memory Format :
- FRAM
- Memory Density :
- 131072 bit
- Manufacturer :
- FUJITSU Semiconductor Limited
- Organization :
- 16KX8
- Surface Mount :
- yes
- Supply Voltage-Max (Vsup) :
- 3.6 V
- REACH SVHC :
- Unknown
- Temperature Grade :
- Industrial
- JESD-30 Code :
- R-PDSO-G8
- Supply Voltage-Min (Vsup) :
- 2.7 V
- Max Frequency :
- 400kHz
- HTS Code :
- 8542.32.00.71
- Max Supply Voltage :
- 3.6V
- Radiation Hardening :
- No
- Address Bus Width :
- 17b
- Supplier Device Package :
- 8-SOP
- Data Bus Width :
- 8B
- Min Operating Temperature :
- -40°C
- Memory Width :
- 8
- Terminal Position :
- Dual
- Density :
- 128 kb
- Operating Temperature :
- -40°C~85°C TA
- Series :
- --
- Clock Frequency :
- 400kHz
- Pin Count :
- 8
- Access Time :
- 900ns
- Number of Pins :
- 8
- Packaging :
- Tube
- Write Cycle Time - Word, Page :
- --
- Terminal Pitch :
- 1.27 mm
- Interface :
- 2-Wire, I2C, Serial
- Length :
- 5.05 mm
- Number of Terminals :
- 8
- Min Supply Voltage :
- 2.7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MB85RC128PNF-G-JNE1

Memory Fujitsu Electronics America, Inc. MB85RC128PNF-G-JNE1 Overview
The Memory Fujitsu Electronics America, Inc. MB85RC128PNF-G-JNE1 is a high-performance IC FRAM that offers a substantial 128Kbit storage capacity with an efficient I2C interface operating at speeds up to 400kHz. Enclosed in a compact 8SOP package, this device is designed for applications demanding high-speed data collection and low power consumption. This FRAM (Ferroelectric Random Access Memory) benefits from Fujitsu's cutting-edge technology, providing non-volatile memory solutions that ensure data integrity even during unexpected power loss, making it ideal for critical applications in various industrial settings.
MB85RC128PNF-G-JNE1 Features
This FRAM unit features several technical advantages, including low-power operation, fast data write access times, and high endurance, making it suitable for frequent, high-speed writing cycles without degrading the memory integrity. Its I2C interface facilitates easy integration into existing architectures, simplifying the design and implementation process for system developers.
MB85RC128PNF-G-JNE1 Applications
- Data Logging Systems: Perfect for use in environments where high-frequency data logging is required, such as temperature or pressure monitoring systems in industrial applications. The MB85RC128PNF-G-JNE1 ensures data is not lost in the event of a power failure.
- Wearable Technology: Its low power consumption and small form factor make it ideal for wearable devices, where space and energy efficiency are paramount. This FRAM can manage health and activity data effectively, providing robust back-end support for wearable tech.
- Industrial Automation: In automation systems, reliable and rapid access to data is crucial. This FRAM's capabilities enable it to perform excellently in such environments, storing configuration data and operational parameters with high reliability.
- Consumer Electronics: Suitable for consumer electronics where device settings and user preferences must be preserved across power cycles, enhancing user convenience and device functionality.
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