KSD1616ALTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

NPN

hFE Min :

135

Base Part Number :

KSD1616

Transistor Element Material :

SILICON

Transition Frequency :

160MHz

Number of Terminations :

3

Published :

2004

Collector Base Voltage (VCBO) :

120V

Transistor Type :

NPN

Length :

5.2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

Weight :

240mg

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

Collector Emitter Saturation Voltage :

300mV

Radiation Hardening :

No

Frequency :

160MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Emitter Base Voltage (VEBO) :

6V

Voltage - Rated DC :

60V

Mount :

Through Hole

Operating Temperature :

150°C TJ

Pbfree Code :

yes

JESD-609 Code :

e3

Element Configuration :

Single

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation :

750mW

Terminal Finish :

Tin (Sn)

Max Collector Current :

1A

Lead Free :

Lead Free

Packaging :

Tape and Box (TB)

Collector Emitter Voltage (VCEO) :

60V

Gain Bandwidth Product :

160MHz

Mounting Type :

Through Hole

Max Breakdown Voltage :

60V

Width :

4.19mm

Transistor Application :

SWITCHING

Max Power Dissipation :

750mW

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Height :

5.33mm

Terminal Position :

BOTTOM

Number of Pins :

3

Current Rating :

1A

Collector Emitter Breakdown Voltage :

60V