KSC945GTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Radiation Hardening :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Collector Emitter Saturation Voltage :

150mV

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Pins :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Base Part Number :

KSC945

Number of Terminations :

3

Lead Free :

Lead Free

Height :

4.58mm

Gain Bandwidth Product :

300MHz

Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

40

Transistor Type :

NPN

Packaging :

Tape and Box (TB)

Transition Frequency :

300MHz

Frequency :

300MHz

Pbfree Code :

yes

Terminal Position :

BOTTOM

Max Breakdown Voltage :

50V

Max Collector Current :

150mA

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

6 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

50V

REACH SVHC :

No SVHC

Length :

4.58mm

Weight :

240mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 6V

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

250mW

Published :

2002

Width :

3.86mm

JESD-609 Code :

e3

Current Rating :

150mA

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Number of Elements :

1

Collector Base Voltage (VCBO) :

60V