KSC2073H2TSTU
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- Mfr.Part #
- KSC2073H2TSTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Cropped Leads
- Datasheet
- Download
- Description
- TRANS NPN 150V 1.5A TO220-3
- Stock
- 11,294
- In Stock ：
- 11,294
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 150V
- Gain Bandwidth Product :
- 4MHz
- Weight :
- 1.8g
- Radiation Hardening :
- No
- Max Collector Current :
- 1.5A
- Max Power Dissipation :
- 25W
- Power Dissipation :
- 25W
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 150V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 10V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Current Rating :
- 1.5A
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-220-3 Cropped Leads
- Frequency :
- 4MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Saturation Voltage :
- 1V
- Packaging :
- Tube
- Element Configuration :
- Single
- Published :
- 2013
- Collector Base Voltage (VCBO) :
- 150V
- Base Part Number :
- KSC2073
- hFE Min :
- 40
- Transition Frequency :
- 4MHz
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 150V
- Datasheets
- KSC2073H2TSTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Cropped Leads Tube Through Hole
KSC2073H2TSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
KSC2073H2TSTU Features
the DC current gain for this device is 40 @ 500mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSC2073H2TSTU Applications
There are a lot of ON Semiconductor
KSC2073H2TSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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