KSA1175RTA
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- Mfr.Part #
- KSA1175RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92S
- Stock
- 12,779
- In Stock ：
- 12,779
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Base Part Number :
- KSA1175
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Power - Max :
- 250mW
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 180MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1mA 6V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Current - Collector (Ic) (Max) :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSA1175RTA
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSA1175RTA Overview
This device has a DC current gain of 40 @ 1mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 50V maximal voltage is present.
KSA1175RTA Features
the DC current gain for this device is 40 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
KSA1175RTA Applications
There are a lot of ON Semiconductor
KSA1175RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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