JANTXV2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Lead, Tin

Series :

Military, MIL-PRF-19500/557

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

JESD-609 Code :

e0

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Packaging :

Bulk

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Power Dissipation-Max :

800mW Ta 25W Tc

Qualification Status :

Qualified

Factory Lead Time :

24 Weeks

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Published :

1997

Continuous Drain Current (ID) :

8A

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Number of Terminations :

3

Pbfree Code :

No

FET Type :

N-Channel

Pin Count :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Power Dissipation :

800mW

Vgs (Max) :

±20V

Package / Case :

TO-205AF Metal Can

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

Wire