JANTXV2N6784

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 10V

Power Dissipation-Max :

800mW Ta 15W Tc

Reach Compliance Code :

Unknown

Additional Feature :

RADIATION HARDENED

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.25A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Reference Standard :

MILITARY STANDARD (USA)

Configuration :

Single

Mount :

Through Hole

Number of Elements :

1

Continuous Drain Current (ID) :

2.25A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-205AF Metal Can

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Packaging :

Bulk

Series :

Military, MIL-PRF-19500/556

FET Type :

N-Channel

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

2.25A Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

9A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-39

Qualification Status :

Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Terminal Position :

BOTTOM

Drain-source On Resistance-Max :

1.5Ohm

JESD-30 Code :

O-MBCY-W3

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Terminal Form :

Wire

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant