JANTXV2N6341
- Mfr.Part #
- JANTXV2N6341
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 50UA TO3
- Stock
- 25,309
- In Stock :
- 25,309
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/509
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10A, 2V
- Supplier Device Package :
- TO-3
- RoHS :
- N
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Terminal Form :
- PIN/PEG
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 2.5A, 25A
- Qualification Status :
- Qualified
- Pin Count :
- 2
- Current - Collector (Ic) (Max) :
- 50 µA
- ECCN Code :
- EAR99
- DC Current Gain-Min (hFE) :
- 30
- Case Connection :
- COLLECTOR
- Product Status :
- Active
- Package / Case :
- TO-204AA, TO-3
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Technology :
- Si
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Number of Elements :
- 1
- Reference Standard :
- MIL-19500/509
- Manufacturer :
- IDEC
- Reach Compliance Code :
- Compliant
- Package Shape :
- Round
- Power Dissipation-Max (Abs) :
- 200 W
- Collector-Emitter Voltage-Max :
- 150 V
- Subcategory :
- Transistors
- Number of Terminals :
- 2
- JEDEC-95 Code :
- TO-204
- Current - Collector Cutoff (Max) :
- 50μA
- Power - Max :
- 200 W
- Collector Current-Max (IC) :
- 10 A
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Brand :
- Microchip / Microsemi
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- JESD-30 Code :
- O-MBFM-P2
- Frequency - Transition :
- -
- Datasheets
- JANTXV2N6341

NPN -65°C ~ 175°C (TJ) 50µA 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole
JANTXV2N6341 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10A, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 2.5A, 25A.TO-3 is the supplier device package for this product.In the 150 V setting, the maximum collector-emitter voltage is set.This device displays a 150 V maximum voltage - Collector Emitter Breakdown.
JANTXV2N6341 Features
the DC current gain for this device is 30 @ 10A, 2V
the vce saturation(Max) is 1.8V @ 2.5A, 25A
the supplier device package of TO-3
JANTXV2N6341 Applications
There are a lot of Microchip
JANTXV2N6341 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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