JANTXV2N3737UB
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- Mfr.Part #
- JANTXV2N3737UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A
- Stock
- 6,174
- In Stock ：
- 6,174
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Power - Max :
- 500mW
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Turn On Time-Max (ton) :
- 48ns
- Package / Case :
- 3-SMD, No Lead
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 75V
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 900mV
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- Military, MIL-PRF-19500/395
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 500mW
- Pbfree Code :
- No
- Turn Off Time-Max (toff) :
- 60ns
- Packaging :
- Bulk
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e0
- JEDEC-95 Code :
- TO-46
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Datasheets
- JANTXV2N3737UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JANTXV2N3737UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 1A 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.During maximum operation, collector current can be as low as 1.5A volts.
JANTXV2N3737UB Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JANTXV2N3737UB Applications
There are a lot of Microsemi Corporation
JANTXV2N3737UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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