JANTXV2N3251A
- Mfr.Part #
- JANTXV2N3251A
- Manufacturer
- Microsemi
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.2A TO39
- Stock
- 47,654
- In Stock :
- 47,654
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 0.36W
- JESD-30 Code :
- R-CDSO-N3
- Current - Collector (Ic) (Max) :
- 200mA
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Terminal Position :
- Dual
- Power - Max :
- 360mW
- Turn Off Time-Max (toff) :
- 300ns
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Configuration :
- Single
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time-Max (ton) :
- 70ns
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/323
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Terminal Finish :
- TIN LEAD
- Package / Case :
- 3-SMD, No Lead
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.95
- ECCN Code :
- EAR99
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Reference Standard :
- MIL-19500/323
- Datasheets
- JANTXV2N3251A

PNP -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JANTXV2N3251AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
JANTXV2N3251AUB Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
JANTXV2N3251AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N3251AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| JANTV2N6437 | Microsemi | 46,920 | POWER BJT |
| JANTV2N6546 | Microsemi | 4,283 | POWER BJT |
| JANTX1N1184 | Microsemi | 24,453 | DIODE GEN PURP 100V 35A DO5 |
| JANTX1N1184R | Microsemi | 4,488 | DIODE GEN PURP 100V 35A DO203AB |
| JANTX1N1186 | Microsemi | 14,200 | DIODE GEN PURP 200V 35A DO5 |
| JANTX1N1186R | Microsemi | 41,955 | SILICON RECTIFIER |
| JANTX1N1188 | Microsemi | 5,048 | SILICON RECTIFIER |
| JANTX1N1188R | Microsemi | 49,462 | DIODE GEN PURP 400V 35A DO203AB |
| JANTX1N1190 | Microsemi | 28,601 | DIODE GEN PURP 600V 35A DO5 |
| JANTX1N1190R | Microsemi | 9,252 | DIODE GEN PURP 600V 35A DO5 |
| JANTX1N1202A | Microsemi | 33,587 | DIODE GEN PURP 200V 12A DO203AA |
| JANTX1N1202AR | Microsemi | 33,476 | DIODE GEN PURP 200V 12A DO203AA |
| JANTX1N1204A | Microsemi | 2 | DIODE GEN PURP 400V 12A DO203AA |
| JANTX1N1204AR | Microsemi | 69 | DIODE GEN PURP 400V 12A DO203AA |
| JANTX1N1206A | Microsemi | 17,305 | DIODE GEN PURP 600V 12A DO203AA |
















