JANTX2N3636
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- Mfr.Part #
- JANTX2N3636
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 10UA TO39
- Stock
- 47,715
- In Stock ：
- 47,715
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 175V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Packaging :
- Bulk
- HTS Code :
- 8541.29.00.95
- Published :
- 2007
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 175V
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time-Max (ton) :
- 200ns
- Turn Off Time-Max (toff) :
- 650ns
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Series :
- Military, MIL-PRF-19500/357
- Power - Max :
- 1W
- Max Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Factory Lead Time :
- 23 Weeks
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Datasheets
- JANTX2N3636
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3636L Overview
In this device, the DC current gain is 50 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 50mA.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTX2N3636L Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JANTX2N3636L Applications
There are a lot of Microsemi Corporation
JANTX2N3636L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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