JAN2N6782U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Case Connection :

SOURCE

Terminal Position :

QUAD

Number of Elements :

1

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Rds On (Max) @ Id, Vgs :

610m Ω @ 3.5A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Continuous Drain Current (ID) :

3.5A

Power Dissipation-Max :

800mW Ta 15W Tc

Number of Terminations :

15

Mounting Type :

Surface Mount

Package / Case :

18-CLCC

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Series :

Military, MIL-PRF-19500/556

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-CQCC-N15

Pbfree Code :

No

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Radiation Hardening :

No

Pin Count :

18

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.61Ohm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Reference Standard :

MIL-19500

Published :

1997

Qualification Status :

Qualified