IXTV96N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTV96

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Series :

TrenchHV™

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Rds On (Max) @ Id, Vgs :

29m Ω @ 500mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS Corporation

Pbfree Code :

yes

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-220-3, Short Tab

Fall Time (Typ) :

28 ns

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

250A

FET Feature :

--

Published :

2007

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

625W Tc

Drain-source On Resistance-Max :

0.029Ohm

RoHS :

Compliant

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Rise Time :

22ns

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Min Operating Temperature :

-55 °C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

250 V

Surface Mount :

No

Avalanche Energy Rating (Eas) :

2000 mJ

Drain to Source Voltage (Vdss) :

250 V

Max Power Dissipation :

625 W

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSIP-T3

Turn-Off Delay Time :

59 ns

Case Connection :

DRAIN

Number of Elements :

1

Continuous Drain Current (ID) :

96A

Rds On Max :

29 mΩ

Power Dissipation :

625W

Packaging :

Tube

Power Dissipation (Max) :

625W (Tc)

Reach Compliance Code :

Compliant

Number of Terminals :

3

Terminal Position :

Single

Package :

Tube

Drain to Source Breakdown Voltage :

250V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

PLUS220

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Package Shape :

RECTANGULAR

Max Operating Temperature :

150 °C

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Drain to Source Resistance :

29 mΩ

Input Capacitance :

6.1 nF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

FET Type :

N-Channel

Product Status :

Active

RoHS Status :

ROHS3 Compliant