IXTV26N60P
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- Mfr.Part #
- IXTV26N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A PLUS220
- Stock
- 20,633
- In Stock ：
- 20,633
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS Corporation
- Voltage - Rated DC :
- 600V
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 600 V
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 75 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 65A
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation (Max) :
- 460W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Rise Time :
- 27ns
- Current Rating :
- 26A
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.27Ohm
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Obsolete
- Power Dissipation :
- 460W
- JESD-30 Code :
- R-PSIP-T3
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 26A
- Series :
- PolarHV™
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package :
- Tube
- FET Feature :
- --
- Package / Case :
- TO-220-3, Short Tab
- Supplier Device Package :
- PLUS220
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 460W Tc
- Published :
- 2006
- JESD-609 Code :
- e1
- Fall Time (Typ) :
- 21 ns
- Vgs (Max) :
- ±30V
- Datasheets
- IXTV26N60P
N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-220-3, Short Tab
IXTV26N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4150pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 65A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTV26N60P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXTV26N60P Applications
There are a lot of IXYS
IXTV26N60P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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