IXTQ82N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

142nC @ 10V

Product Type :

MOSFET

Product Category :

MOSFET

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Gate to Source Voltage (Vgs) :

20V

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Vgs (Max) :

±20V

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Type :

N Channel

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Input Capacitance :

4.8 nF

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

250 V

Turn-Off Delay Time :

78 ns

Mounting Type :

Through Hole

Supplier Device Package :

TO-3P

Drain to Source Resistance :

35 mΩ

Qualification :

-

Width :

4.9 mm

Length :

15.8 mm

FET Type :

N-Channel

Manufacturer :

IXYS

Number of Pins :

3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

1000 mJ

RoHS :

Compliant

Pulsed Drain Current-Max (IDM) :

200A

Subcategory :

MOSFETs

Package :

Tube

Mount :

Through Hole

Number of Elements :

1

Fall Time (Typ) :

22 ns

Package / Case :

TO-3P-3, SC-65-3

Min Operating Temperature :

-55 °C

Height :

20.3 mm

FET Feature :

--

Continuous Drain Current (ID) :

82A

Published :

2006

Max Operating Temperature :

150 °C

Terminal Position :

Single

Qualification Status :

Not Qualified

Continuous Drain Current Id :

82A

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

500W

Configuration :

Single

Power Dissipation (Max) :

500W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

500 W

Factory Lead Time :

24 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

250V

Drain to Source Breakdown Voltage :

250V

Pbfree Code :

yes

Base Product Number :

IXTQ82

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Power Dissipation-Max :

500W Tc

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

35m Ω @ 41A, 10V

Drain-source On Resistance-Max :

0.035 Ω

Series :

PolarHT™

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Lead Free :

Lead Free

Rds On Max :

35 mΩ

Rise Time :

20ns

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C