IXTQ26N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Type :

PolarHV Power MOSFET

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

460W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1200 mJ

Turn-Off Delay Time :

75 ns

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

600V

Current Rating :

26A

Packaging :

Tube

Surface Mount :

No

Lead Free :

Lead Free

Vgs (Max) :

±30V

FET Feature :

--

Number of Channels :

1 Channel

Tradename :

PolarHV

Length :

15.8 mm

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

26A

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Case Connection :

DRAIN

Product Type :

MOSFET

Pbfree Code :

yes

Element Configuration :

Single

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

65A

Pin Count :

3

Mount :

Through Hole

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-3P

Drain-source On Resistance-Max :

0.27Ohm

RoHS :

Details

Power Dissipation :

460W

Gate to Source Voltage (Vgs) :

30V

Published :

2006

Transistor Application :

SWITCHING

Voltage - Rated DC :

600V

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Series :

PolarHV™

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Package / Case :

TO-3P-3, SC-65-3

Package Shape :

RECTANGULAR

Package :

Tube

JESD-609 Code :

e3

Width :

4.9 mm

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600 V

Product Category :

MOSFET

Terminal Position :

Single

Number of Elements :

1

Rise Time :

27ns

Fall Time (Typ) :

21 ns

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

24 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Subcategory :

MOSFETs

Power Dissipation-Max :

460W Tc

Base Product Number :

IXTQ26

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

270m Ω @ 500mA, 10V

Additional Feature :

AVALANCHE RATED

Height :

20.3 mm

Brand :

IXYS