IXTP1R4N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.66 mm

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Product Status :

Active

Drain to Source Breakdown Voltage :

1.2kV

Series :

Polar™

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

78 ns

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Rds On Max :

13 Ω

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Rds On (Max) @ Id, Vgs :

13 Ω @ 500mA, 10V

Width :

4.83 mm

Mounting Type :

Through Hole

Packaging :

Tube

Lead Free :

Lead Free

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

1.4A

Product Type :

MOSFET

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

86W Tc

Fall Time (Typ) :

29 ns

JEDEC-95 Code :

TO-220AB

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 100μA

FET Feature :

--

Base Product Number :

IXTP1

FET Type :

N-Channel

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Package Shape :

RECTANGULAR

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Number of Terminations :

3

Qualification Status :

Not Qualified

Min Operating Temperature :

-55 °C

Number of Elements :

1

Drain-source On Resistance-Max :

13 Ω

Manufacturer :

IXYS

Supplier Device Package :

TO-220AB

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

150 °C

Power Dissipation :

86W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

3A

Power Dissipation-Max (Abs) :

86 W

Drain to Source Voltage (Vdss) :

1200V

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

86W (Tc)

Input Capacitance :

666 pF

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Brand :

IXYS

Height :

9.15 mm

DS Breakdown Voltage-Min :

1200 V

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

150 mJ

Input Capacitance (Ciss) (Max) @ Vds :

666pF @ 25V

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

24 Weeks

Drain Current-Max (Abs) (ID) :

1.4 A

Transistor Polarity :

N-Channel

Max Power Dissipation :

86 W

Rise Time :

27ns

Surface Mount :

No

RoHS :

Details

Drain to Source Resistance :

13 Ω

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

24.8nC @ 10V

Case Connection :

DRAIN

Element Configuration :

Single

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant