IXTH6N80A

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Configuration :

Single

Length :

16.26 mm

Power Dissipation (Max) :

180W (Tc)

Pbfree Code :

yes

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Surface Mount :

No

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Drain to Source Resistance :

1.4 Ω

Rds On Max :

1.4 Ω

Vgs (Max) :

±20V

Max Power Dissipation :

180 W

Pulsed Drain Current-Max (IDM) :

24A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Drain to Source Voltage (Vdss) :

800V

Transistor Application :

SWITCHING

Power Dissipation Ambient-Max :

180 W

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

RoHS :

Compliant

Mounting Style :

Through Hole

Input Capacitance :

2.8 nF

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Pin Count :

3

Number of Terminals :

3

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Series :

--

Operating Mode :

ENHANCEMENT MODE

Height :

21.46 mm

Product Status :

Active

Drain Current-Max (Abs) (ID) :

6A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Turn-Off Delay Time :

100 ns

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Number of Pins :

3

Drain to Source Breakdown Voltage :

800V

Transistor Element Material :

SILICON

Base Product Number :

IXTH6

Power Dissipation-Max (Abs) :

150 W

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Power Dissipation-Max :

180W Tc

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

Width :

5.3 mm

Power Dissipation :

180W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Element Configuration :

Single

Reach Compliance Code :

Compliant

Fall Time (Typ) :

60 ns

Case Connection :

DRAIN

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 3A, 10V

Drain-source On Resistance-Max :

1.4 Ω

Rise Time :

40ns

JEDEC-95 Code :

TO-247AD

Continuous Drain Current (ID) :

6A

Terminal Position :

Single

DS Breakdown Voltage-Min :

800 V

Supplier Device Package :

TO-247 (IXTH)

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Package :

Tube