IXTH50P10
- Mfr.Part #
- IXTH50P10
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 50A TO247
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- Type :
- Standard Power MOSFET
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- -100V
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Manufacturer :
- IXYS
- FET Feature :
- --
- Max Power Dissipation :
- 300 W
- Turn-Off Delay Time :
- 86 ns
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 50A
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 25A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4350pF @ 25V
- Max Operating Temperature :
- 150 °C
- Radiation Hardening :
- No
- Transistor Polarity :
- P-Channel
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.055Ohm
- Rise Time :
- 39ns
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 300W (Tc)
- Pbfree Code :
- yes
- Width :
- 5.3 mm
- Power Dissipation :
- 300W
- Factory Lead Time :
- 28 Weeks
- RoHS :
- Details
- JEDEC-95 Code :
- TO-247AD
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 P-Channel
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Fall Time (Typ) :
- 38 ns
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Unknown
- Series :
- --
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Drain to Source Resistance :
- 55 mΩ
- Base Product Number :
- IXTH50
- Product Status :
- Active
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 200A
- Number of Elements :
- 1
- Min Operating Temperature :
- -55 °C
- Length :
- 16.26 mm
- Input Capacitance :
- 4.35 nF
- Rds On Max :
- 55 mΩ
- Height :
- 21.46 mm
- Supplier Device Package :
- TO-247 (IXTH)
- Datasheets
- IXTH50P10
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P-Channel Tube 55m Ω @ 25A, 10V ±20V 4350pF @ 25V 140nC @ 10V 100V TO-247-3
IXTH50P10 Overview
A device's maximum input capacitance is 4350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 86 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 55 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH50P10 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 86 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 55 mΩ
a 100V drain to source voltage (Vdss)
IXTH50P10 Applications
There are a lot of IXYS
IXTH50P10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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