IXTH50P10

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Mfr.Part #
IXTH50P10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 100V 50A TO247
Stock
3
In Stock :
3

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Type :
Standard Power MOSFET
Package :
Tube
Drain to Source Breakdown Voltage :
-100V
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Drain to Source Voltage (Vdss) :
100V
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-247-3
Manufacturer :
IXYS
FET Feature :
--
Max Power Dissipation :
300 W
Turn-Off Delay Time :
86 ns
Power Dissipation-Max :
300W Tc
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Configuration :
Single
Continuous Drain Current (ID) :
50A
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
55m Ω @ 25A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
4350pF @ 25V
Max Operating Temperature :
150 °C
Radiation Hardening :
No
Transistor Polarity :
P-Channel
Packaging :
Tube
Channel Mode :
Enhancement
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.055Ohm
Rise Time :
39ns
ECCN Code :
EAR99
Lead Free :
Lead Free
Power Dissipation (Max) :
300W (Tc)
Pbfree Code :
yes
Width :
5.3 mm
Power Dissipation :
300W
Factory Lead Time :
28 Weeks
RoHS :
Details
JEDEC-95 Code :
TO-247AD
Published :
2008
Transistor Element Material :
SILICON
Transistor Type :
1 P-Channel
Product Type :
MOSFET
Mount :
Through Hole
Fall Time (Typ) :
38 ns
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Unknown
Series :
--
Element Configuration :
Single
JESD-609 Code :
e1
Drain to Source Resistance :
55 mΩ
Base Product Number :
IXTH50
Product Status :
Active
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Application :
SWITCHING
Pin Count :
3
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
200A
Number of Elements :
1
Min Operating Temperature :
-55 °C
Length :
16.26 mm
Input Capacitance :
4.35 nF
Rds On Max :
55 mΩ
Height :
21.46 mm
Supplier Device Package :
TO-247 (IXTH)
Datasheets
IXTH50P10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH50P10 from Chip IC,where excellence meets affordability. This product stands out with its Type:Standard Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTH50P10 pinout, IXTH50P10 datasheet PDF, IXTH50P10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH50P10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH50P10


P-Channel Tube 55m Ω @ 25A, 10V ±20V 4350pF @ 25V 140nC @ 10V 100V TO-247-3

IXTH50P10 Overview


A device's maximum input capacitance is 4350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 86 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 55 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTH50P10 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 86 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 55 mΩ
a 100V drain to source voltage (Vdss)


IXTH50P10 Applications


There are a lot of IXYS
IXTH50P10 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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