IXKK85N60C

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Mfr.Part #
IXKK85N60C
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 85A TO264A
Stock
49,149
In Stock :
49,149

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Channel Mode :
Enhancement
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
1800 mJ
JESD-30 Code :
R-PSFM-T3
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Surface Mount :
No
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.036 Ω
Rds On (Max) @ Id, Vgs :
36m Ω @ 55A, 10V
FET Type :
N-Channel
Brand :
IXYS
Pin Count :
3
Width :
5.31 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Power Dissipation :
700W
Length :
20.29 mm
DS Breakdown Voltage-Min :
600 V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-264AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
Super Junction
Package :
Tube
Continuous Drain Current (ID) :
85A
Element Configuration :
Single
Pbfree Code :
yes
Fall Time (Typ) :
10 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Qualification Status :
Not Qualified
Factory Lead Time :
12 Weeks
Transistor Element Material :
SILICON
Product Type :
MOSFET
Resistance :
36mOhm
Packaging :
Tube
Drain to Source Breakdown Voltage :
600V
Turn-Off Delay Time :
110 ns
Drain Current-Max (Abs) (ID) :
85 A
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Height :
26.59 mm
Transistor Type :
1 N-Channel
Number of Terminals :
3
Mount :
Through Hole
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Base Product Number :
IXKK85
JESD-609 Code :
e1
Published :
2003
Operating Temperature :
-55°C~150°C TJ
Series :
CoolMOS™
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
85A Tc
Tradename :
CoolMOS
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
650nC @ 10V
Product Status :
Active
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Type :
CoolMOS Power MOSFET
Power Dissipation (Max) :
--
Number of Terminations :
3
Package / Case :
TO-264-3, TO-264AA
Vgs (Max) :
±20V
Supplier Device Package :
TO-264A
Rise Time :
27ns
RoHS :
Details
Reach Compliance Code :
Compliant
Datasheets
IXKK85N60C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKK85N60C from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Type:CoolMOS Power MOSFET, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, IXKK85N60C pinout, IXKK85N60C datasheet PDF, IXKK85N60C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKK85N60C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKK85N60C


N-Channel Tube 36m Ω @ 55A, 10V ±20V 650nC @ 10V 600V TO-264-3, TO-264AA

IXKK85N60C Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1800 mJ.This device has a continuous drain current (ID) of [85A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 85 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXKK85N60C Features


the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
a 600V drain to source voltage (Vdss)


IXKK85N60C Applications


There are a lot of IXYS
IXKK85N60C applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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