IXKK85N60C
- Mfr.Part #
- IXKK85N60C
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 85A TO264A
- Stock
- 49,149
- In Stock :
- 49,149
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Channel Mode :
- Enhancement
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 1800 mJ
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Surface Mount :
- No
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.036 Ω
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 55A, 10V
- FET Type :
- N-Channel
- Brand :
- IXYS
- Pin Count :
- 3
- Width :
- 5.31 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 700W
- Length :
- 20.29 mm
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- Super Junction
- Package :
- Tube
- Continuous Drain Current (ID) :
- 85A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 10 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 12 Weeks
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Resistance :
- 36mOhm
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 110 ns
- Drain Current-Max (Abs) (ID) :
- 85 A
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Height :
- 26.59 mm
- Transistor Type :
- 1 N-Channel
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Base Product Number :
- IXKK85
- JESD-609 Code :
- e1
- Published :
- 2003
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- CoolMOS™
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Tradename :
- CoolMOS
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 650nC @ 10V
- Product Status :
- Active
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Type :
- CoolMOS Power MOSFET
- Power Dissipation (Max) :
- --
- Number of Terminations :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-264A
- Rise Time :
- 27ns
- RoHS :
- Details
- Reach Compliance Code :
- Compliant
- Datasheets
- IXKK85N60C

N-Channel Tube 36m Ω @ 55A, 10V ±20V 650nC @ 10V 600V TO-264-3, TO-264AA
IXKK85N60C Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1800 mJ.This device has a continuous drain current (ID) of [85A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 85 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXKK85N60C Features
the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
a 600V drain to source voltage (Vdss)
IXKK85N60C Applications
There are a lot of IXYS
IXKK85N60C applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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