IXFX90N20Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Fall Time (Typ) :

12 ns

Reach Compliance Code :

Compliant

Voltage - Rated DC :

200V

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

500W Tc

Transistor Polarity :

N-Channel

Supplier Device Package :

PLUS247™-3

JESD-30 Code :

R-PSIP-T3

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Drain-source On Resistance-Max :

0.022Ohm

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Terminal Position :

Single

Tradename :

HiPerFET

Power Dissipation :

500W

FET Type :

N-Channel

Pbfree Code :

yes

Brand :

IXYS

Transistor Element Material :

SILICON

Rise Time :

31ns

RoHS :

Details

Pin Count :

3

Number of Terminations :

3

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Base Product Number :

IXFX90

Length :

16.13 mm

Mounting Type :

Through Hole

Current Rating :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Rds On (Max) @ Id, Vgs :

22m Ω @ 45A, 10V

Number of Terminals :

3

Package Shape :

RECTANGULAR

Package :

Tube

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Lead Free :

Contains Lead

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Pins :

3

Product Category :

MOSFET

Drain Current-Max (Abs) (ID) :

90 A

Published :

2002

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Continuous Drain Current (ID) :

90A

DS Breakdown Voltage-Min :

200 V

Manufacturer :

IXYS

Element Configuration :

Single

Height :

21.34 mm

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

FET Feature :

--

Width :

5.21 mm

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Breakdown Voltage :

200V

Power Dissipation (Max) :

500W (Tc)

Avalanche Energy Rating (Eas) :

2500 mJ

Product Type :

MOSFET

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

82 ns

Drain to Source Voltage (Vdss) :

200V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™

Mount :

Through Hole

Number of Elements :

1

Power Dissipation-Max (Abs) :

500 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

360 A

Vgs(th) (Max) @ Id :

4V @ 4mA

Surface Mount :

No