IXFX30N50Q

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Mfr.Part #
IXFX30N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A PLUS247-3
Stock
18,317
In Stock :
18,317

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2002
Fall Time (Typ) :
20 ns
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Number of Pins :
3
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Drain to Source Voltage (Vdss) :
500V
Product Status :
Obsolete
Power Dissipation-Max :
416W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFX30
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Power Dissipation :
416W
Manufacturer :
IXYS Corporation
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
120A
Power Dissipation (Max) :
416W (Tc)
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
30A Tc
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSIP-T3
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-247-3
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Rds On (Max) @ Id, Vgs :
160m Ω @ 15A, 10V
Series :
HiPerFET™
JESD-609 Code :
e1
Packaging :
Tube
Vgs (Max) :
±20V
Mount :
Through Hole
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
30A
Transistor Element Material :
SILICON
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
20V
Rise Time :
42ns
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Terminal Position :
Single
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Drain-source On Resistance-Max :
0.16Ohm
FET Type :
N-Channel
Supplier Device Package :
PLUS247™-3
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
1500 mJ
Turn-Off Delay Time :
75 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Datasheets
IXFX30N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX30N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFX30N50Q pinout, IXFX30N50Q datasheet PDF, IXFX30N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX30N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX30N50Q


N-Channel Tube 160m Ω @ 15A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-247-3

IXFX30N50Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX30N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)


IXFX30N50Q Applications


There are a lot of IXYS
IXFX30N50Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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