IXFT18N90P
- Mfr.Part #
- IXFT18N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 18A TO268
- Stock
- 41,629
- In Stock :
- 41,629
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarP2™
- Drain to Source Breakdown Voltage :
- 900V
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max (Abs) :
- 540 W
- Drain to Source Voltage (Vdss) :
- 900V
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Rds On Max :
- 600 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2011
- Surface Mount :
- yes
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 18 A
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 97nC @ 10V
- JESD-609 Code :
- e3
- Configuration :
- Single
- Factory Lead Time :
- 24 Weeks
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 36A
- Max Operating Temperature :
- 150 °C
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Matte Tin (Sn)
- Brand :
- IXYS
- RoHS :
- Compliant
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 18A
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-268
- Drain to Source Resistance :
- 600 mΩ
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 500mA, 10V
- Type :
- Polar Power MOSFET HiPerFET
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Tradename :
- HiPerFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 900 V
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 540W Tc
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Package :
- Tube
- Product Status :
- Active
- Max Power Dissipation :
- 540 W
- Power Dissipation :
- 540W
- Power Dissipation (Max) :
- 540W (Tc)
- JEDEC-95 Code :
- TO-268AA
- Terminal Form :
- Gull wing
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.6Ohm
- Number of Terminals :
- 2
- Min Operating Temperature :
- -55 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 5230pF @ 25V
- Base Product Number :
- IXFT18
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Unknown
- FET Feature :
- --
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Input Capacitance :
- 5.23 nF
- FET Type :
- N-Channel
- Datasheets
- IXFT18N90P

N-Channel Tube 600m Ω @ 500mA, 10V ±30V 5230pF @ 25V 97nC @ 10V 900V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT18N90P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5230pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 900V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 900V.There is no drain current on this device since the maximum continuous current it can conduct is 18 A.There is a peak drain current of 36A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 600 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 900 V, it should remain above the 900 V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFT18N90P Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 900V voltage
based on its rated peak drain current 36A.
single MOSFETs transistor is 600 mΩ
a 900V drain to source voltage (Vdss)
IXFT18N90P Applications
There are a lot of IXYS
IXFT18N90P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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