IXFT18N90P

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Mfr.Part #
IXFT18N90P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 900V 18A TO268
Stock
41,629
In Stock :
41,629

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarP2™
Drain to Source Breakdown Voltage :
900V
Mounting Style :
SMD/SMT
Power Dissipation-Max (Abs) :
540 W
Drain to Source Voltage (Vdss) :
900V
Packaging :
Tube
Transistor Polarity :
N-Channel
Rds On Max :
600 mΩ
Operating Temperature :
-55°C~150°C TJ
Published :
2011
Surface Mount :
yes
Element Configuration :
Single
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
18 A
Avalanche Energy Rating (Eas) :
800 mJ
Number of Terminations :
2
Gate Charge (Qg) (Max) @ Vgs :
97nC @ 10V
JESD-609 Code :
e3
Configuration :
Single
Factory Lead Time :
24 Weeks
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
Pulsed Drain Current-Max (IDM) :
36A
Max Operating Temperature :
150 °C
JESD-30 Code :
R-PSSO-G2
Terminal Finish :
Matte Tin (Sn)
Brand :
IXYS
RoHS :
Compliant
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
18A
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-268
Drain to Source Resistance :
600 mΩ
Qualification Status :
Not Qualified
Number of Elements :
1
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
600m Ω @ 500mA, 10V
Type :
Polar Power MOSFET HiPerFET
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Tradename :
HiPerFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
900 V
Transistor Application :
SWITCHING
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
540W Tc
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Package :
Tube
Product Status :
Active
Max Power Dissipation :
540 W
Power Dissipation :
540W
Power Dissipation (Max) :
540W (Tc)
JEDEC-95 Code :
TO-268AA
Terminal Form :
Gull wing
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.6Ohm
Number of Terminals :
2
Min Operating Temperature :
-55 °C
Input Capacitance (Ciss) (Max) @ Vds :
5230pF @ 25V
Base Product Number :
IXFT18
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Unknown
FET Feature :
--
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Input Capacitance :
5.23 nF
FET Type :
N-Channel
Datasheets
IXFT18N90P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT18N90P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, Type:Polar Power MOSFET HiPerFET, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT18N90P pinout, IXFT18N90P datasheet PDF, IXFT18N90P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT18N90P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT18N90P


N-Channel Tube 600m Ω @ 500mA, 10V ±30V 5230pF @ 25V 97nC @ 10V 900V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT18N90P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5230pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 900V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 900V.There is no drain current on this device since the maximum continuous current it can conduct is 18 A.There is a peak drain current of 36A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 600 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 900 V, it should remain above the 900 V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFT18N90P Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 900V voltage
based on its rated peak drain current 36A.
single MOSFETs transistor is 600 mΩ
a 900V drain to source voltage (Vdss)


IXFT18N90P Applications


There are a lot of IXYS
IXFT18N90P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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