IXFT15N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Power Dissipation :

690W

Number of Pins :

3

Pin Count :

4

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Minimum Operating Temperature :

-55 °C

Base Product Number :

IXFT15

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 7.5A, 10V

Turn-Off Delay Time :

30 ns

Maximum Operating Temperature :

+150 °C

Terminal Position :

Single

Power Dissipation (Max) :

690W (Tc)

Height :

5.1mm

Packaging :

Tube

Package Type :

TO-268

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Product Status :

Active

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Channels :

1 Channel

Power Dissipation-Max :

690W Tc

Operating Temperature :

-55°C~150°C TJ

Tradename :

HiPerFET

Avalanche Energy Rating (Eas) :

1000 mJ

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Product Category :

MOSFET

Vgs (Max) :

±30V

Width :

14mm

Drain-source On Resistance-Max :

1.05 Ω

Element Configuration :

Single

Number of Terminations :

2

Factory Lead Time :

26 Weeks

Drain Current-Max (Abs) (ID) :

15 A

Turn On Delay Time :

28 ns

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Terminal Form :

Gull wing

Mounting Style :

SMD/SMT

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-268

Number of Elements per Chip :

1

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

45A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Configuration :

Single

FET Type :

N-Channel

JEDEC-95 Code :

TO-268AA

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation-Max (Abs) :

690 W

Terminal Finish :

Matte Tin (Sn)

Manufacturer :

IXYS

Length :

16.05mm

Package :

Tube

Product Type :

MOSFET

DS Breakdown Voltage-Min :

1000 V

Additional Feature :

AVALANCHE RATED

Number of Terminals :

2

Rise Time :

250ns

Drain to Source Voltage (Vdss) :

1000V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

1 N-Channel

Channel Type :

N

Drain to Source Breakdown Voltage :

1kV