IXFN50N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Case Connection :

DRAIN

Package / Case :

SOT-227-4, miniBLOC

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Number of Terminations :

4

Product Status :

Obsolete

Drain Current-Max (Abs) (ID) :

50 A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Rds On (Max) @ Id, Vgs :

90m Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Product :

Power MOSFET Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs (Max) :

±20V

Product Category :

Discrete Semiconductor Modules

RoHS :

Details

Published :

2000

Pulsed Drain Current-Max (IDM) :

200A

RoHS Status :

ROHS3 Compliant

Number of Pins :

4

Radiation Hardening :

No

Mounting Style :

Chassis Mount

Continuous Drain Current (ID) :

50A

Pin Count :

4

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Mount :

Chassis Mount, Screw

Brand :

IXYS

Series :

HiPerFET™

Power Dissipation-Max :

600W Tc

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Additional Feature :

AVALANCHE RATED

Length :

38.23 mm

Tradename :

HyperFET

Width :

25.42 mm

Rise Time :

60ns

Power Dissipation :

600W

Supplier Device Package :

SOT-227B

JESD-30 Code :

R-PUFM-X4

Fall Time (Typ) :

45 ns

Package :

Tube

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Manufacturer :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

9.6 mm

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

500V

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

500 V

Terminal Finish :

Nickel (Ni)

Minimum Operating Temperature :

- 55 C

Resistance :

90mOhm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

600W (Tc)

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.1 Ω

Terminal Position :

UPPER

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Turn-Off Delay Time :

120 ns

Transistor Application :

SWITCHING

FET Feature :

--

Power Dissipation-Max (Abs) :

600 W

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

500V

Number of Channels :

1 Channel

Base Product Number :

IXFN50

Surface Mount :

No

Product Type :

Discrete Semiconductor Modules

Number of Terminals :

4