IXFN24N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

MSL :

-

Continuous Drain Current Id :

24A

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

Voltage - Rated DC :

1kV

Power Dissipation :

600W

Terminal Form :

UNSPECIFIED

Width :

25.42mm

Channel Mode :

Enhancement

Length :

38.23mm

Number of Terminations :

4

ECCN Code :

EAR99

Terminal Finish :

Nickel (Ni)

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

24 A

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

267nC @ 10V

DS Breakdown Voltage-Min :

1000 V

FET Type :

N-Channel

Type :

HiPerFET

Product Category :

Discrete Semiconductor Modules

Drain-source On Resistance-Max :

0.39 Ω

Fall Time (Typ) :

21 ns

Case Connection :

Isolated

Isolation Voltage :

2.5kV

Continuous Drain Current (ID) :

24A

Resistance :

390mOhm

Number of Terminals :

4

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Elements :

1

Configuration :

Single

Surface Mount :

No

Threshold Voltage :

5.5V

Pin Count :

4

Power Dissipation-Max (Abs) :

600 W

Terminal Position :

UPPER

Packaging :

Tube

Brand :

IXYS

Termination :

Screw

Mounting Style :

Screw Mounts

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Element Configuration :

Single

Number of Pins :

3

Reverse Recovery Time :

250 ns

Package / Case :

SOT-227-4, miniBLOC

REACH SVHC :

No SVHC

Radiation Hardening :

No

Supplier Device Package :

SOT-227B

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

Maximum Operating Temperature :

+150 °C

Qualification :

-

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Pulsed Drain Current-Max (IDM) :

96A

Tradename :

HyperFET

Package Type :

SOT-227

Moisture Sensitivity Level (MSL) :

Not Applicable

Minimum Operating Temperature :

-55 °C

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Height :

9.6mm

Number of Channels :

1 Channel

Published :

2000

Turn-Off Delay Time :

75 ns

Power Dissipation-Max :

568W Tc

FET Feature :

--

RoHS :

Details

Number of Elements per Chip :

1

Package Shape :

RECTANGULAR

Product :

Power MOSFET Modules

Package :

Tube

JESD-30 Code :

R-PUFM-X4

Avalanche Energy Rating (Eas) :

3000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Dual Supply Voltage :

1kV

Current Rating :

24A

Turn On Delay Time :

35 ns

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Factory Lead Time :

4 Weeks

Nominal Vgs :

5.5 V

Product Status :

Not For New Designs

Power Dissipation (Max) :

568W (Tc)

Mount :

Chassis Mount, Panel, Screw

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

1kV

Channel Type :

N

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Rise Time :

35ns

Drain to Source Voltage (Vdss) :

1000V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

40g

Vgs (Max) :

±20V

Recovery Time :

250 ns

Product Type :

Discrete Semiconductor Modules