IXFN200N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

-55 °C

Pbfree Code :

yes

Length :

38.23mm

Pin Count :

4

Width :

25.07mm

Product Status :

Active

Continuous Drain Current Id :

200A

Vgs (Max) :

±20V

Subcategory :

Discrete Semiconductor Modules

Maximum Operating Temperature :

+175 °C

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Brand :

IXYS

Drain to Source Breakdown Voltage :

100V

Published :

2003

Number of Terminals :

4

Drain to Source Voltage (Vdss) :

100V

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Terminal Form :

UNSPECIFIED

Channel Mode :

Enhancement

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Threshold Voltage :

5V

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

150 ns

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

680W Tc

Package Type :

SOT-227

Supplier Device Package :

SOT-227B

Transistor Application :

SWITCHING

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

235nC @ 10V

Series :

Polar™

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

4

ECCN Code :

EAR99

Fall Time (Typ) :

90 ns

Number of Elements per Chip :

1

Pulsed Drain Current-Max (IDM) :

400 A

Terminal Finish :

Nickel (Ni)

FET Feature :

--

DS Breakdown Voltage-Min :

100 V

RoHS :

Details

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PUFM-X4

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

680W

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 8mA

MSL :

-

Qualification :

-

Base Product Number :

IXFN200

Manufacturer :

IXYS

Type :

HiPerFET

Continuous Drain Current (ID) :

200A

Avalanche Energy Rating (Eas) :

4000 mJ

Terminal Position :

UPPER

Tradename :

HiPerFET

Package :

Box

Power Dissipation (Max) :

680W (Tc)

Package / Case :

SOT-227-4, miniBLOC

Factory Lead Time :

30 Weeks

Rise Time :

35ns

Channel Type :

N

Height :

9.6mm

RoHS Status :

ROHS3 Compliant

Mounting Style :

Screw Mounts

Product Category :

Discrete Semiconductor Modules

Packaging :

Tube

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 500mA, 10V

Product Type :

Discrete Semiconductor Modules

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Mount :

Chassis Mount

Operating Temperature :

-55°C~175°C TJ

Product :

Power MOSFET Modules

Drain-source On Resistance-Max :

0.0075Ohm