IXFK150N30X3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

890W (Tc)

Factory Lead Time :

19 Weeks

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

300V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Manufacturer :

IXYS

Case Connection :

DRAIN

FET Type :

N-Channel

RoHS :

Details

DS Breakdown Voltage-Min :

300V

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

254nC @ 10V

Rise Time :

32 ns

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Supplier Device Package :

TO-264

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

400A

Product Type :

MOSFET

Series :

HiPerFET™

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.0083Ohm

Power Dissipation-Max :

890W Tc

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

Package :

Tube

Channel Mode :

Enhancement

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

13.1nF @ 25V

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 75A, 10V

Surface Mount :

No

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFK150

Terminal Position :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

150A

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

2000 mJ

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSFM-T3

Transistor Type :

1 N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tube