IS61QDB21M36-250M3
- Mfr.Part #
- IS61QDB21M36-250M3
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 165-LBGA
- Datasheet
- Download
- Description
- IC SRAM 36MBIT PARALLEL 165LFBGA
- Stock
- 42,173
- In Stock :
- 42,173
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- I/O Type :
- Separate
- Number of Ports :
- 2
- Packaging :
- Tray
- Sync/Async :
- SYNCHRONOUS
- Address Bus Width :
- 19b
- Operating Temperature :
- 0°C~70°C TA
- Number of Terminations :
- 165
- Terminal Pitch :
- 1mm
- Standby Voltage-Min :
- 1.71V
- Additional Feature :
- PIPELINED ARCHITECTURE
- Pbfree Code :
- No
- Qualification Status :
- Not Qualified
- Memory Format :
- SRAM
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Organization :
- 1MX36
- Memory Type :
- Volatile
- Word Size :
- 36b
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Memory Width :
- 36
- Access Time :
- 7.5ns
- Memory Interface :
- Parallel
- Number of Pins :
- 165
- Length :
- 17mm
- Package / Case :
- 165-LBGA
- Density :
- 36 Mb
- Supply Voltage-Max (Vsup) :
- 1.89V
- Pin Count :
- 165
- Number of Functions :
- 1
- Supply Voltage :
- 1.8V
- JESD-609 Code :
- e0
- Height Seated (Max) :
- 1.7mm
- Output Characteristics :
- 3-STATE
- Clock Frequency :
- 250MHz
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Supply :
- 1.71V~1.89V
- Memory Size :
- 36Mb 1M x 36
- Terminal Position :
- BOTTOM
- Supply Voltage-Min (Vsup) :
- 1.71V
- Operating Supply Voltage :
- 1.8V
- Mounting Type :
- Surface Mount
- Nominal Supply Current :
- 700mA
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IS61QDB21M36-250M3
Memory Integrated Silicon Solution, Inc. (ISSI) IS61QDB21M36-250M3 Overview
The IS61QDB21M36-250M3 by Integrated Silicon Solution, Inc. (ISSI) is a high-capacity 36Mbit SRAM device, engineered using advanced memory technology to deliver quick and reliable data storage and retrieval. This SRAM module is encapsulated in a 165LFBGA package, offering a compact footprint for high-density applications. The device is designed to meet the rigorous demands of high-performance computing environments, ensuring robustness and efficiency. With its parallel interface, it guarantees excellent data throughput and low latency, making the Memory Integrated Silicon Solution, Inc. (ISSI) IS61QDB21M36-250M3 an ideal choice for applications requiring fast access to large amounts of temporary data.
IS61QDB21M36-250M3 Features
The IS61QDB21M36-250M3 SRAM features a dense 36Mbit storage capacity within a 165LFBGA package, ensuring minimal space usage with maximal storage efficiency. Its parallel communication interface allows for high-speed data transfer, which is crucial for performance-critical applications. This memory module operates at a speed of 250MHz, providing high bandwidth for data-intensive operations. The reliability and durability of the device are enhanced by ISSI's commitment to quality, making it suitable for industrial-level applications.
IS61QDB21M36-250M3 Applications
- Networking Equipment: Utilized in routers and switches for packet buffering to manage data flow efficiently.
- High-Performance Computing: Critical in systems requiring fast data access to support complex computations and large datasets.
- Automotive Electronics: Deployed in advanced driver-assistance systems (ADAS) to process real-time data from vehicle sensors.
- Industrial Automation: Used in PLCs for managing operations data and machine-to-machine communication.
- Telecommunications: Integral to telecom infrastructure for managing fast data transactions and signal processing.
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