IS43DR16160A-25EBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Output Characteristics :

3-STATE

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

Number of Pins :

84

Supply Voltage-Min (Vsup) :

1.7V

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Mount :

Surface Mount

Package / Case :

84-TFBGA

Operating Mode :

SYNCHRONOUS

Terminal Finish :

TIN SILVER COPPER

Data Bus Width :

16b

Supply Voltage :

1.8V

Time@Peak Reflow Temperature-Max (s) :

40

Density :

256 Mb

Voltage - Supply :

1.7V~1.9V

Max Supply Current :

155mA

Supply Voltage-Max (Vsup) :

1.9V

Clock Frequency :

400MHz

Operating Temperature :

0°C~70°C TA

Address Bus Width :

15b

Number of Functions :

1

Operating Supply Voltage :

1.8V

I/O Type :

COMMON

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Write Cycle Time - Word, Page :

15ns

Standby Current-Max :

0.005A

Memory Interface :

Parallel

Interleaved Burst Length :

48

Sequential Burst Length :

48

HTS Code :

8542.32.00.24

Length :

12.5mm

Pbfree Code :

yes

Memory Format :

DRAM

Number of Ports :

1

Peak Reflow Temperature (Cel) :

260

Memory Width :

16

Access Time :

400ns

JESD-609 Code :

e1

Terminal Pitch :

0.8mm

Packaging :

Tray

Organization :

16MX16

Nominal Supply Current :

385mA

Number of Terminations :

84

Pin Count :

84

Memory Size :

256Mb 16M x 16