IRLZ44NSTRRPBF
- Mfr.Part #
- IRLZ44NSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 47A D2PAK
- Stock
- 13,170
- In Stock :
- 13,170
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- D2PAK
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Fall Time (Typ) :
- 15 ns
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 55V
- Number of Pins :
- 3
- Turn On Delay Time :
- 11 ns
- Rds On Max :
- 22 mΩ
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 25A, 10V
- Max Operating Temperature :
- 175°C
- Drain to Source Voltage (Vdss) :
- 55V
- Vgs (Max) :
- ±16V
- Mount :
- Surface Mount
- Length :
- 10.668mm
- Input Capacitance :
- 1.7nF
- Published :
- 2004
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Continuous Drain Current (ID) :
- 47A
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 35mOhm
- Width :
- 9.65mm
- Height :
- 4.826mm
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current Rating :
- 47A
- Gate to Source Voltage (Vgs) :
- 16V
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 5V
- Turn-Off Delay Time :
- 26 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 110W
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3.8W Ta 110W Tc
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Packaging :
- Tape and Reel (TR)
- Series :
- HEXFET®
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Rise Time :
- 84ns
- Datasheets
- IRLZ44NSTRRPBF

N-Channel Tape & Reel (TR) 22mOhm @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ44NSTRRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 35mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
IRLZ44NSTRRPBF Features
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 35mOhm
a 55V drain to source voltage (Vdss)
IRLZ44NSTRRPBF Applications
There are a lot of Infineon Technologies
IRLZ44NSTRRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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