IRLU3915PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

16V

Number of Terminations :

3

Mounting Type :

Through Hole

Power Dissipation-Max :

120W Tc

JESD-609 Code :

e3

Resistance :

14mOhm

Turn On Delay Time :

7.4 ns

Avalanche Energy Rating (Eas) :

200 mJ

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

55V

Current Rating :

30A

Dual Supply Voltage :

55V

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rise Time :

51ns

Height :

6.22mm

Published :

2010

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Fall Time (Typ) :

100 ns

Number of Pins :

3

Vgs (Max) :

±16V

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Threshold Voltage :

3V

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drain to Source Breakdown Voltage :

55V

Power Dissipation :

120W

Width :

2.3876mm

ECCN Code :

EAR99

Number of Elements :

1

Turn-Off Delay Time :

83 ns

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Series :

HEXFET®

Nominal Vgs :

3 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 25V

Length :

6.7056mm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

61A

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Radiation Hardening :

No

Case Connection :

DRAIN