IRLU3636PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

2.5 V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Width :

2.3876mm

Rise Time :

216ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

99A

FET Type :

N-Channel

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

Published :

2009

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

6.223mm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Number of Pins :

3

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Packaging :

Tube

Power Dissipation :

143W

Element Configuration :

Single

Length :

6.7056mm

Fall Time (Typ) :

96 ns

Number of Elements :

1

Case Connection :

DRAIN

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

45 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

16V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

43 ns

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Power Dissipation-Max :

143W Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3