IRLR8503PBF
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- Mfr.Part #
- IRLR8503PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 44A DPAK
- Stock
- 4,511
- In Stock ：
- 4,511
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Resistance :
- 16mOhm
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 62W
- Voltage - Rated DC :
- 30V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 62W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Threshold Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Current Rating :
- 44A
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 18ns
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 30V
- Dual Supply Voltage :
- 30V
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 44A
- Mounting Type :
- Surface Mount
- Published :
- 2004
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 25V
- Input Capacitance :
- 1.65nF
- Supplier Device Package :
- D-Pak
- Nominal Vgs :
- 1 V
- Rds On Max :
- 16 mΩ
- Datasheets
- IRLR8503PBF
N-Channel Tube 16mOhm @ 15A, 10V ±20V 1650pF @ 25V 20nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8503PBF Overview
A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 44A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRLR8503PBF Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 30V voltage
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRLR8503PBF Applications
There are a lot of Infineon Technologies
IRLR8503PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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