IRLR7807ZTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Series :

HEXFET®

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Length :

6.7056mm

Supplier Device Package :

D-Pak

RoHS Status :

RoHS Compliant

Power Dissipation :

40W

Fall Time (Typ) :

3.5 ns

Input Capacitance :

780pF

Rds On Max :

13.8 mΩ

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

1.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Width :

6.22mm

Max Operating Temperature :

175°C

Rise Time :

28ns

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Height :

2.38mm

Power Dissipation-Max :

40W Tc

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

43A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Turn-Off Delay Time :

9.8 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

13.8mOhm @ 15A, 10V

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Drain to Source Resistance :

13.8mOhm

Turn On Delay Time :

7.1 ns

REACH SVHC :

No SVHC

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63