IRLR7807ZTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

28 mJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Power Dissipation-Max :

40W Tc

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Case Connection :

DRAIN

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

170A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

30A

Published :

2003

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 15A, 10V

Drain-source On Resistance-Max :

0.0138Ohm

Number of Terminations :

2

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA