IRLR3705Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

245

Transistor Element Material :

SILICON

Published :

2004

DS Breakdown Voltage-Min :

55V

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±16V

Series :

HEXFET®

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

360A

Terminal Finish :

TIN LEAD

Drain Current-Max (Abs) (ID) :

42A

Power Dissipation-Max :

130W Tc

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.008Ohm

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Transistor Application :

SWITCHING

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

8m Ω @ 42A, 10V

Qualification Status :

Not Qualified

Terminal Position :

Single

Packaging :

Tube

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

110 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 5V