IRL1404ZSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

230W

Drain Current-Max (Abs) (ID) :

200A

Width :

9.65mm

Series :

HEXFET®

Turn On Delay Time :

19 ns

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Form :

Gull wing

Number of Elements :

1

Current Rating :

75A

Height :

4.826mm

JESD-609 Code :

e3

Turn-Off Delay Time :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

180ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage - Rated DC :

40V

Vgs (Max) :

±16V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Fall Time (Typ) :

49 ns

RoHS Status :

ROHS3 Compliant

Resistance :

3.1mOhm

Length :

10.668mm

Threshold Voltage :

2.7V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Transistor Application :

SWITCHING

Element Configuration :

Single

Published :

2006

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

230W Tc

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 5V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

790A

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 75A, 10V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Recovery Time :

39 ns

Continuous Drain Current (ID) :

75mA

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

220 mJ

ECCN Code :

EAR99