IRGSL4B60KD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

73μJ (on), 47μJ (off)

Number of Pins :

3

Turn Off Time-Nom (toff) :

199 ns

Input Type :

Standard

Power Dissipation :

63W

Current Rating :

11A

RoHS Status :

RoHS Compliant

Max Power Dissipation :

63W

Length :

10.668mm

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Collector Emitter Saturation Voltage :

2.5V

Td (on/off) @ 25°C :

22ns/100ns

Gate-Emitter Thr Voltage-Max :

5.5V

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Breakdown Voltage :

600V

Fall Time-Max (tf) :

89ns

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Test Condition :

400V, 4A, 100 Ω, 15V

Voltage - Rated DC :

600V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Width :

4.826mm

Additional Feature :

ULTRA FAST SOFT RECOVERY

Operating Temperature :

-55°C~175°C TJ

Rise Time :

18ns

Current - Collector Pulsed (Icm) :

22A

Max Collector Current :

11A

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Transistor Application :

Motor Control

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

2.5V

Height :

9.652mm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Reverse Recovery Time :

93 ns

Case Connection :

COLLECTOR

Radiation Hardening :

No

IGBT Type :

NPT

Number of Terminations :

3

Turn On Time :

40 ns

Gate Charge :

12nC

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Packaging :

Tube