IRGS8B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Switching Energy :

160μJ (on), 160μJ (off)

Base Part Number :

IRGS8B60KPBF

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 8A

RoHS Status :

RoHS Compliant

Published :

2004

Number of Terminations :

2

Number of Elements :

1

IGBT Type :

NPT

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

167W

Collector Emitter Voltage (VCEO) :

2.2V

Turn On Time :

43 ns

Gate Charge :

29nC

Voltage - Rated DC :

600V

Element Configuration :

Single

Height :

4.572mm

Lead Free :

Lead Free

Td (on/off) @ 25°C :

23ns/140ns

Max Collector Current :

28A

Peak Reflow Temperature (Cel) :

260

Length :

10.668mm

Mount :

Surface Mount

Rise Time :

22ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Pulsed (Icm) :

34A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

28A

Max Power Dissipation :

167W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

220 ns

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

5.5V

Fall Time-Max (tf) :

56ns

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Input Type :

Standard

Collector Emitter Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Width :

9.65mm

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Number of Pins :

3

Collector Emitter Saturation Voltage :

2.2V

Transistor Application :

Motor Control

Factory Lead Time :

13 Weeks

Test Condition :

400V, 8A, 50 Ω, 15V