IRGB4060DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Delay Time :

39 ns

Transistor Application :

POWER CONTROL

Max Power Dissipation :

99W

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 8A

Number of Pins :

3

Td (on/off) @ 25°C :

30ns/95ns

Reverse Recovery Time :

60 ns

Length :

10.66mm

Collector Emitter Saturation Voltage :

1.85V

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Voltage (VCEO) :

1.85V

Input Type :

Standard

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Published :

2006

Weight :

6.000006g

Package / Case :

TO-220-3

Mount :

Through Hole

Test Condition :

400V, 8A, 47 Ω, 15V

Rise Time :

15ns

Gate-Emitter Thr Voltage-Max :

6.5V

Number of Elements :

1

Turn-Off Delay Time :

106 ns

Gate-Emitter Voltage-Max :

20V

Number of Terminations :

3

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

600V

Current - Collector Pulsed (Icm) :

32A

RoHS Status :

RoHS Compliant

Turn On Time :

45 ns

Transistor Element Material :

SILICON

Switching Energy :

70μJ (on), 145μJ (off)

Turn Off Time-Nom (toff) :

152 ns

Packaging :

Tube

Radiation Hardening :

No

ECCN Code :

EAR99

IGBT Type :

Trench

Width :

4.82mm

Factory Lead Time :

16 Weeks

Termination :

Through Hole

JEDEC-95 Code :

TO-220AB

Height :

9.02mm

Case Connection :

COLLECTOR

Gate Charge :

19nC

REACH SVHC :

No SVHC

Power Dissipation :

99W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

1.95V

Fall Time-Max (tf) :

26ns

Lead Free :

Lead Free

Max Collector Current :

16A