IRG7PH35U-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

1.2kV

Collector Emitter Voltage (VCEO) :

2.2V

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

60A

Turn On Time :

45 ns

Operating Temperature :

-55°C~175°C TJ

Fall Time-Max (tf) :

105ns

Power - Max :

210W

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

250

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-247AD

Gate-Emitter Thr Voltage-Max :

6V

Collector Emitter Saturation Voltage :

1.9V

Max Collector Current :

55A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Turn Off Time-Nom (toff) :

400 ns

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Gate Charge :

130nC

Published :

2010

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Package / Case :

TO-247-3

Element Configuration :

Single

Switching Energy :

1.06mJ (on), 620μJ (off)

Number of Pins :

3

Number of Terminations :

3

Input Type :

Standard

Number of Elements :

1

Base Part Number :

IRG7PH35

Case Connection :

COLLECTOR

Packaging :

Tube

Mount :

Through Hole

IGBT Type :

Trench

Max Power Dissipation :

210W

Test Condition :

600V, 20A, 10 Ω, 15V

Td (on/off) @ 25°C :

30ns/160ns

Terminal Finish :

MATTE TIN OVER NICKEL

Voltage - Collector Emitter Breakdown (Max) :

1200V

Transistor Application :

POWER CONTROL